NCD57084DR2G SUR
| Disponible |
NCD57084DR2G ON
• High Peak Output Current (+7A/−7 A)
• Low Output Impedance for Enhanced IGBT Driving
• Short Propagation Delays with Accurate Matching
• DESAT Protection with Programmable Delay
• Negative Voltage (Down to −9 V) Capability for DESAT
• IGBT Gate Clamping during Short Circuit
• IGBT Gate Active Pull Down
• Soft Turn Off During IGBT Short Circuit
• Tight UVLO Thresholds for Bias Flexibility
• Output Partial Pulse Avoidance During UVLO/DESAT (Restart)
• 3.3 V, 5 V, and 15 V Logic Input
• 2.5 kVrms Galvanic Isolation
• High Transient Immunity
• High Electromagnetic Immunity
• NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable
• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant
• High Peak Output Current (+7A/−7 A)
• Low Output Impedance for Enhanced IGBT Driving
• Short Propagation Delays with Accurate Matching
• DESAT Protection with Programmable Delay
• Negative Voltage (Down to −9 V) Capability for DESAT
• IGBT Gate Clamping during Short Circuit
• IGBT Gate Active Pull Down
• Soft Turn Off During IGBT Short Circuit
• Tight UVLO Thresholds for Bias Flexibility
• Output Partial Pulse Avoidance During UVLO/DESAT (Restart)
• 3.3 V, 5 V, and 15 V Logic Input
• 2.5 kVrms Galvanic Isolation
• High Transient Immunity
• High Electromagnetic Immunity
• NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable
• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant
Please make sure your contact information is correct. Your message will be sent directly to the recipient(s) and will not be publicly displayed. We will never distribute or sell your personal information to third parties without your express permission.
